Spin Polarization of Injected Electrons
نویسندگان
چکیده
منابع مشابه
Spin polarization of injected electrons.
LaBella et al. (1) claimed 92% spin polarization for electrons injected into gallium arsenide [GaAs(110)] from a Ni scanning tunneling microscope (STM) tip, which, they asserted, emitted 100% spin-polarized electrons. Such a claim, if substantiated, would constitute a development of great importance for the emerging field of spintronics: It would suggest that the field is rapidly closing in on ...
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The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D’yakonov-Perel, and BirAronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature-dependence...
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Abstract. We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero incidence angle. A region where the spin-orbit coupling is present separates the source and the drain without spin-orbit coupling. We show how the...
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ژورنال
عنوان ژورنال: Science
سال: 2002
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.296.5571.1195a